IndiumV3, Russie, Analysis, bibRecord, 000437

Well-ordered (1 0 0) InAs surfaces using wet chemical treatments

Identifieur interne : 000437 ( Russie/Analysis ); précédent : 000436; suivant : 000438

Well-ordered (1 0 0) InAs surfaces using wet chemical treatments

Auteurs : RBID : Pascal:05-0047135

Descripteurs français

Pascal (Inist)
- Traitement chimique, Recuit, Microscopie tunnel balayage, LEED, Spectre réflexion, Anisotropie, Facteur réflexion, Structure surface, Rugosité, Topographie surface, Spectrométrie réflexion, Indium arséniure, Semiconducteur, Gallium arséniure, As In, InAs, Composé minéral.
Wicri :
- concept : Composé minéral.

English descriptors

KwdEn :
- Anisotropy, Annealing, Chemical treatment, Gallium arsenides, Indium arsenides, Inorganic compounds, LEED, Reflection spectroscopy, Reflection spectrum, Reflectivity, Roughness, Scanning tunneling microscopy, Semiconductor materials, Surface structure, Surface topography.

Abstract

Atomic ordering of HCl-isopropanol (HCl-iPA) treated and vacuum annealed (100) InAs surfaces was studied by scanning tunneling microscopy (STM), low-energy electron diffraction (LEED), and reflectance anisotropy spectroscopy (RAS). On the as-treated surface, a diffused (1 × 1) pattern is observed, which successively evolves to the β₂(2 x 4)/c(2 x 8) and (4 x 2)/c(8 x 2) ones after annealing to 330°C and 410°C, respectively. At the intermediate temperature of 370°C, an α₂(2 x 4)/(4 x 2) mixed reconstruction is observed. Reflectance anisotropy spectra are compared with those of the corresponding reconstructions observed after As-decapping and found to be quite similar. Therefore we conclude that high-quality (100) InAs surfaces can be obtained by wet chemical treatment in an easy, inexpensive and practical way.

Links toward previous steps (curation, corpus...)

to stream Main, to step Corpus: 00A945
to stream Main, to step Repository: 00A938
to stream Russie, to step Extraction: 000437

Links to Exploration step

Pascal:05-0047135

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Well-ordered (1 0 0) InAs surfaces using wet chemical treatments</title>
<author><name sortKey="Tereshchenko, O E" uniqKey="Tereshchenko O">O. E. Tereshchenko</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Semiconductor Physics, Nanequilibrium Processes in Semiconductors, Navosibirsk State University, Lavrentiev Av. 13</s1>
<s2>630090 Novosibirsk</s2>
<s3>RUS</s3>
<sZ>1 aut.</sZ>
</inist:fA14>
<country>Russie</country>
<wicri:noRegion>630090 Novosibirsk</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Placidi, E" uniqKey="Placidi E">E. Placidi</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Dipartimento di Fisica and INFM, Università di Roma Tor Vergata</s1>
<s2>00133 Roma</s2>
<s3>ITA</s3>
<sZ>2 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>Italie</country>
<placeName><settlement type="city">Rome</settlement>
<region nuts="2">Latium</region>
</placeName>
</affiliation>
</author>
<author><name sortKey="Paget, D" uniqKey="Paget D">D. Paget</name>
<affiliation wicri:level="3"><inist:fA14 i1="03"><s1>Laboratoire de Physique de la Matière Condensée, Ecole Polytechnique</s1>
<s2>91128 Palaiseau</s2>
<s3>FRA</s3>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>France</country>
<placeName><region type="region" nuts="2">Île-de-France</region>
<settlement type="city">Palaiseau</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Chiaradia, P" uniqKey="Chiaradia P">P. Chiaradia</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Dipartimento di Fisica and INFM, Università di Roma Tor Vergata</s1>
<s2>00133 Roma</s2>
<s3>ITA</s3>
<sZ>2 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>Italie</country>
<placeName><settlement type="city">Rome</settlement>
<region nuts="2">Latium</region>
</placeName>
</affiliation>
</author>
<author><name sortKey="Balzarotti, A" uniqKey="Balzarotti A">A. Balzarotti</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Dipartimento di Fisica and INFM, Università di Roma Tor Vergata</s1>
<s2>00133 Roma</s2>
<s3>ITA</s3>
<sZ>2 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>Italie</country>
<placeName><settlement type="city">Rome</settlement>
<region nuts="2">Latium</region>
</placeName>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">05-0047135</idno>
<date when="2004">2004</date>
<idno type="stanalyst">PASCAL 05-0047135 INIST</idno>
<idno type="RBID">Pascal:05-0047135</idno>
<idno type="wicri:Area/Main/Corpus">00A945</idno>
<idno type="wicri:Area/Main/Repository">00A938</idno>
<idno type="wicri:Area/Russie/Extraction">000437</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">0039-6028</idno>
<title level="j" type="abbreviated">Surf. sci.</title>
<title level="j" type="main">Surface science</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Anisotropy</term>
<term>Annealing</term>
<term>Chemical treatment</term>
<term>Gallium arsenides</term>
<term>Indium arsenides</term>
<term>Inorganic compounds</term>
<term>LEED</term>
<term>Reflection spectroscopy</term>
<term>Reflection spectrum</term>
<term>Reflectivity</term>
<term>Roughness</term>
<term>Scanning tunneling microscopy</term>
<term>Semiconductor materials</term>
<term>Surface structure</term>
<term>Surface topography</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Traitement chimique</term>
<term>Recuit</term>
<term>Microscopie tunnel balayage</term>
<term>LEED</term>
<term>Spectre réflexion</term>
<term>Anisotropie</term>
<term>Facteur réflexion</term>
<term>Structure surface</term>
<term>Rugosité</term>
<term>Topographie surface</term>
<term>Spectrométrie réflexion</term>
<term>Indium arséniure</term>
<term>Semiconducteur</term>
<term>Gallium arséniure</term>
<term>As In</term>
<term>InAs</term>
<term>Composé minéral</term>
</keywords>
<keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Composé minéral</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">Atomic ordering of HCl-isopropanol (HCl-iPA) treated and vacuum annealed (100) InAs surfaces was studied by scanning tunneling microscopy (STM), low-energy electron diffraction (LEED), and reflectance anisotropy spectroscopy (RAS). On the as-treated surface, a diffused (1 × 1) pattern is observed, which successively evolves to the β<sub>2</sub>
(2 x 4)/c(2 x 8) and (4 x 2)/c(8 x 2) ones after annealing to 330°C and 410°C, respectively. At the intermediate temperature of 370°C, an α<sub>2</sub>
(2 x 4)/(4 x 2) mixed reconstruction is observed. Reflectance anisotropy spectra are compared with those of the corresponding reconstructions observed after As-decapping and found to be quite similar. Therefore we conclude that high-quality (100) InAs surfaces can be obtained by wet chemical treatment in an easy, inexpensive and practical way.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0039-6028</s0>
</fA01>
<fA02 i1="01"><s0>SUSCAS</s0>
</fA02>
<fA03 i2="1"><s0>Surf. sci.</s0>
</fA03>
<fA05><s2>570</s2>
</fA05>
<fA06><s2>3</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>Well-ordered (1 0 0) InAs surfaces using wet chemical treatments</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>TERESHCHENKO (O. E.)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>PLACIDI (E.)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>PAGET (D.)</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>CHIARADIA (P.)</s1>
</fA11>
<fA11 i1="05" i2="1"><s1>BALZAROTTI (A.)</s1>
</fA11>
<fA14 i1="01"><s1>Institute of Semiconductor Physics, Nanequilibrium Processes in Semiconductors, Navosibirsk State University, Lavrentiev Av. 13</s1>
<s2>630090 Novosibirsk</s2>
<s3>RUS</s3>
<sZ>1 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>Dipartimento di Fisica and INFM, Università di Roma Tor Vergata</s1>
<s2>00133 Roma</s2>
<s3>ITA</s3>
<sZ>2 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</fA14>
<fA14 i1="03"><s1>Laboratoire de Physique de la Matière Condensée, Ecole Polytechnique</s1>
<s2>91128 Palaiseau</s2>
<s3>FRA</s3>
<sZ>3 aut.</sZ>
</fA14>
<fA20><s1>237-244</s1>
</fA20>
<fA21><s1>2004</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>12426</s2>
<s5>354000114260540090</s5>
</fA43>
<fA44><s0>0000</s0>
<s1>© 2005 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45><s0>27 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>05-0047135</s0>
</fA47>
<fA60><s1>P</s1>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Surface science</s0>
</fA64>
<fA66 i1="01"><s0>NLD</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>Atomic ordering of HCl-isopropanol (HCl-iPA) treated and vacuum annealed (100) InAs surfaces was studied by scanning tunneling microscopy (STM), low-energy electron diffraction (LEED), and reflectance anisotropy spectroscopy (RAS). On the as-treated surface, a diffused (1 × 1) pattern is observed, which successively evolves to the β<sub>2</sub>
(2 x 4)/c(2 x 8) and (4 x 2)/c(8 x 2) ones after annealing to 330°C and 410°C, respectively. At the intermediate temperature of 370°C, an α<sub>2</sub>
(2 x 4)/(4 x 2) mixed reconstruction is observed. Reflectance anisotropy spectra are compared with those of the corresponding reconstructions observed after As-decapping and found to be quite similar. Therefore we conclude that high-quality (100) InAs surfaces can be obtained by wet chemical treatment in an easy, inexpensive and practical way.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B60</s0>
</fC02>
<fC02 i1="02" i2="3"><s0>001B70</s0>
</fC02>
<fC02 i1="03" i2="3"><s0>001B80</s0>
</fC02>
<fC03 i1="01" i2="X" l="FRE"><s0>Traitement chimique</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="X" l="ENG"><s0>Chemical treatment</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="X" l="SPA"><s0>Tratamiento químico</s0>
<s5>01</s5>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>Recuit</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="3" l="ENG"><s0>Annealing</s0>
<s5>02</s5>
</fC03>
<fC03 i1="03" i2="3" l="FRE"><s0>Microscopie tunnel balayage</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="3" l="ENG"><s0>Scanning tunneling microscopy</s0>
<s5>03</s5>
</fC03>
<fC03 i1="04" i2="3" l="FRE"><s0>LEED</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="3" l="ENG"><s0>LEED</s0>
<s5>04</s5>
</fC03>
<fC03 i1="05" i2="X" l="FRE"><s0>Spectre réflexion</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="X" l="ENG"><s0>Reflection spectrum</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="X" l="SPA"><s0>Espectro reflexión</s0>
<s5>05</s5>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>Anisotropie</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>Anisotropy</s0>
<s5>06</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Facteur réflexion</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Reflectivity</s0>
<s5>07</s5>
</fC03>
<fC03 i1="08" i2="3" l="FRE"><s0>Structure surface</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="3" l="ENG"><s0>Surface structure</s0>
<s5>08</s5>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Rugosité</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>Roughness</s0>
<s5>09</s5>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>Topographie surface</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="3" l="ENG"><s0>Surface topography</s0>
<s5>10</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Spectrométrie réflexion</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>Reflection spectroscopy</s0>
<s5>11</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>Indium arséniure</s0>
<s2>NK</s2>
<s5>15</s5>
</fC03>
<fC03 i1="12" i2="3" l="ENG"><s0>Indium arsenides</s0>
<s2>NK</s2>
<s5>15</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>Semiconducteur</s0>
<s5>16</s5>
</fC03>
<fC03 i1="13" i2="3" l="ENG"><s0>Semiconductor materials</s0>
<s5>16</s5>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>Gallium arséniure</s0>
<s2>NK</s2>
<s5>17</s5>
</fC03>
<fC03 i1="14" i2="3" l="ENG"><s0>Gallium arsenides</s0>
<s2>NK</s2>
<s5>17</s5>
</fC03>
<fC03 i1="15" i2="3" l="FRE"><s0>As In</s0>
<s4>INC</s4>
<s5>32</s5>
</fC03>
<fC03 i1="16" i2="3" l="FRE"><s0>InAs</s0>
<s4>INC</s4>
<s5>33</s5>
</fC03>
<fC03 i1="17" i2="3" l="FRE"><s0>Composé minéral</s0>
<s5>62</s5>
</fC03>
<fC03 i1="17" i2="3" l="ENG"><s0>Inorganic compounds</s0>
<s5>62</s5>
</fC03>
<fN21><s1>024</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
</fN82>
</pA>
</standard>
</inist>
</record>

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   |texte=   Well-ordered (1 0 0) InAs surfaces using wet chemical treatments
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Well-ordered (1 0 0) InAs surfaces using wet chemical treatments

Well-ordered (1 0 0) InAs surfaces using wet chemical treatments

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri